Jun 2018 : Shujin Huang’s new paper was published on AIP advance and was promoted as an Editor’s Pick. The enhanced flexoelectricity in a 100 nm-thick BaTiO3 (BTO) thin film based metal/ferroelectric insulator/semiconductor (MFS) heterostructure was reported in this letter. Multi-level control of the capacitance in the MFS structure was achieved by combining both ferroelectric and flexoelectric polarizations.

Further information is in https://doi.org/10.1063/1.5031162

https://aip.scitation.org/topic/collections/editors-pick?pageSize=20&startPage=&SeriesKey=adv